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HM35P03 P-Channel Enhancement Mode Power MOSFET

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Description

HM35P03 P-Channel Enhancement Mode Power MOSFET .
The HM35P03K uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.

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Datasheet Specifications

Part number
HM35P03
Manufacturer
H&M Semiconductor
File Size
814.51 KB
Datasheet
HM35P03-HMSemiconductor.pdf
Description
P-Channel Enhancement Mode Power MOSFET

Features

* VDS = -30V,ID = -35A RDS(ON) < 25mΩ @ VGS=-4.5V RDS(ON) < 16mΩ @ VGS=-10V
* High Power and current handing capability
* Lead free product is acquired

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