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HM3207BD - N-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

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Datasheet Details

Part number	HM3207BD
Manufacturer	H&M Semiconductor
File Size	482.69 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	HM3207BD-HMSemiconductor.pdf

HM3207BD Product details

Description

The HM3207BD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Features

VDSS =70V,ID =180A RDS(ON) < 4mΩ @ VGS=10V.
Good stability and uniformity with high EAS.
Special process technology for high ESD capability.
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Excellent package for good heat dissipation Schematic diagram HM3207BD.

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Published: Aug 12, 2025 |