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HM3205B - N-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

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Datasheet Details

Part number	HM3205B
Manufacturer	H&M Semiconductor
File Size	503.53 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	HM3205B-HMSemiconductor.pdf

HM3205B Product details

Description

The HM3205B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Features

VDS =55V,ID =105A RDS(ON) < 6.0mΩ @ VGS=10V (Typ:5.0mΩ) Schematic diagram.
High density cell design for ultra low Rdson.
Fully characterized Avalanche voltage and current.
Good stability and uniformity with high EAS.
Excellent package for good heat dissipation.
Special process technology for high ESD capability H&M SEMI HM3205B.

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Published: Jul 1, 2025 |