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HM30N10D - N-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

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Datasheet Details

Part number	HM30N10D
Manufacturer	H&M Semiconductor
File Size	483.38 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	HM30N10D-HMSemiconductor.pdf

HM30N10D Product details

Description

The HM30N10D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Features

VDS = 100V,ID =30A RDS(ON) < 16mΩ @ VGS=10V (Typ:24mΩ).
Special process technology for high ESD capability.
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Good stability and uniformity with high EAS.
Excellent package for good heat dissipation.

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Published: Aug 12, 2025 |