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HM30P10K - P-Channel Enhancement Mode Power MOSFET

Description

The +03.

uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS =-100V,ID =-30A RDS(ON).

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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+0 3. P-Channel Enhancement Mode Power MOSFET Description The +03. uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features ● VDS =-100V,ID =-30A RDS(ON) <58mΩ @ VGS=-10V (Typ:44mΩ) RDS(ON) <65mΩ @ VGS=--4.5V (Typ:48mΩ) ● Super high dense cell design ● Advanced trench process technology ● Reliable and rugged ● High density cell design for ultra low On-Resistance Schematic diagram +03. Application ● Portable equipment and battery powered systems Marking and pin assignment 100% UIS TESTED! 100% ∆Vds TESTED! TO-252-2L top view Package Marking and Ordering Information Device Marking Device Device Package +03. +03.
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