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HM2333 P-Channel Enhancement Mode Power MOSFET

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Description

HM2333 P-Channel Enhancement Mode Power MOSFET .
The HM2333 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.

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Datasheet Specifications

Part number
HM2333
Manufacturer
H&M Semiconductor
File Size
364.88 KB
Datasheet
HM2333-HMSemiconductor.pdf
Description
P-Channel Enhancement Mode Power MOSFET

Features

* VDS = -12V,ID = -6A RDS(ON) < 45mΩ @ VGS=-2.5V RDS(ON) < 30mΩ @ VGS=-4.5V D G S Schematic diagram
* High power and current handing capability
* Lead free product is acquired

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