HM2328 N-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

Description

100V N Channel Enhancement Mode MOSFET 100 V N MOS HM2328 VDS= 100V RDS(ON), Vgs@10V, Ids@1.0A = 270m Ω RDS(ON), Vgs@4.5V, Ids@0.5A = 340m Ω Feat.

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Datasheet Specifications

Part number: HM2328
Manufacturer: H&M Semiconductor
File Size: 319.61 KB
Datasheet: HM2328-HMSemiconductor.pdf
Description: N-Channel Enhancement Mode Power MOSFET

Features

* Advanced trench process technology High Density Cell Design For Ultra Low OnResistance Improved ShootThrough FOM Package Dimensions Package Dimensions Marking D SOT-23(PACKAGE) 2328 G S REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.5

Applications

* , should be limited by total power dissipation. -2- HM2328 Typical Characteristics 5.0 4.0 ID Drain Current (A) 3.0 VGS=10V VGS=7V 2.0 VGS=5V VGS=4.5V 1.0 VGS=3V 0.0 0 0.5 1 1.5 2 2.5 VDS , Drain-to-Source Voltage (V) Fig.1 Typical Output Characteristics 2 RDSON (mΩ) 265 ID=1A 260

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HM2328 N-Channel Enhancement Mode Power MOSFET H&M Semiconductor

H&M Semiconductor HM2328-like datasheet