Datasheet4U.com

HM2319 P-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

Datasheet Preview Page 1

Description

HM2319 P-Channel Enhancement Mode Power MOSFET .
The HM2319 uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch and battery protection appli.

📥 Download Datasheet

HM2319 Datasheet Preview — Preview of HM2319 PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Specifications

Part number: HM2319
Manufacturer: H&M Semiconductor
File Size: 317.46 KB
Datasheet: HM2319-HMSemiconductor.pdf
Description: P-Channel Enhancement Mode Power MOSFET

Features

* VDS = -40V,ID = -A RDS(ON) < 126mΩ @ VGS=-4.5V RDS(ON) < 85mΩ @ VGS=-10V
* High power and current handing capability
* Lead free product is acquired

HM2319 Distributors

📁 Related Datasheet

HM2301 HM2302 HM2309 HM236WU1-100 HM236WU1-300 HM236WU1-400

📌 All Tags

HM2319 P-Channel Enhancement Mode Power MOSFET H&M Semiconductor

H&M Semiconductor HM2319-like datasheet