HM2306 N-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

Description

HM2306 N-Channel Enhancement Mode Power MOSFET .
The HM2306 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.

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Datasheet Specifications

Part number: HM2306
Manufacturer: H&M Semiconductor
File Size: 279.47 KB
Datasheet: HM2306-HMSemiconductor.pdf
Description: N-Channel Enhancement Mode Power MOSFET

Features

* VDS = 30V,ID = 5.8A RDS(ON) < 59mΩ @ VGS=2.5V RDS(ON) < 45mΩ @ VGS=4.5V RDS(ON) < 41mΩ @ VGS=10V
* High Power and current handing capability
* Lead free product is acquired

Applications

* Load switch
* Power management SOT-23 top view Package Marking And Ordering Information Device Marking Device Device Package HM2306 SOT-23 Reel Size Ø180mm Tape width 8 mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain

HM2306 Distributors

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HM2306 N-Channel Enhancement Mode Power MOSFET H&M Semiconductor

H&M Semiconductor HM2306-like datasheet