HM2302DR N-Channel 20V MOSFET

H&M Semiconductor

Description

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The HM2302DR is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

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Datasheet Specifications

Part number: HM2302DR
Manufacturer: H&M Semiconductor
File Size: 445.34 KB
Datasheet: HM2302DR-HMSemiconductor.pdf
Description: N-Channel 20V MOSFET

Features

* RDS(ON)= 270 mΩ @VGS=4.5V
* RDS(ON)= 330 mΩ @VGS=2.5V
* RDS(ON)= 450 mΩ @VGS=1.8V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC current capability
* Capable doing Cu wire bonding Absolute Maximum Ratings (TA=25℃ Unles

Applications

* Power Management in Note book
* Portable Equipment
* Battery Powered System
* Load Switch

HM2302DR Distributors

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HM2302DR N-Channel 20V MOSFET H&M Semiconductor

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