HM20N65F N-channel Enhanced VDMOSFET

H&M Semiconductor

Description

+01) General .
HM20N65F, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve sw.

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Datasheet Specifications

Part number: HM20N65F
Manufacturer: H&M Semiconductor
File Size: 452.91 KB
Datasheet: HM20N65F-HMSemiconductor.pdf
Description: N-channel Enhanced VDMOSFET

Features

* Fast Switching
* Low ON Resistance(Rdson≤0.5Ω)
* Low Gate Charge (Typical Data:65nC)
* Low Reverse transfer capacitances(Typical: 20pF)

Applications

* Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3 PD TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Vol

HM20N65F Distributors

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HM20N60A HM20N120AB HM20N120T HM20N120TB HM20N50F HM2007

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HM20N65F N-channel Enhanced VDMOSFET H&M Semiconductor

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