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HM20N03Q MOSFET

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Description

HM20N03Q .
The HM20N03Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

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Datasheet Specifications

Part number
HM20N03Q
Manufacturer
H&M Semiconductor
File Size
591.54 KB
Datasheet
HM20N03Q-HMSemiconductor.pdf
Description
MOSFET

Features

* VDS =30V,ID =20A RDS(ON) < 12.2mΩ @ VGS=10V RDS(ON) < 20.5mΩ @ VGS=5V
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Good stability and uniformity with high EAS
* Excellent package for good heat dissipation
* Special pro

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