2SJ360 - MOSFET

Guangdong Kexin Industrial

Datasheet Details

Part number	2SJ360
Manufacturer	Guangdong Kexin Industrial
File Size	74.33 KB
Description	MOSFET
Datasheet	2SJ360_GuangdongKexinIndustrial.pdf

+0.1 2.50-0.1 RDS(on)=0.55 (VGS=-4V,ID=-1.0A) Low leakage current :IDSS=-100 A Max. )(VDS=-60V) +0.1 0.80-0.1 High forward transfer admittance :|Yfs|=0.9S(Typ. ) 1 +0.1 0.48-0.1 2 3 +0.1 0.53-0.1 +0.1 0.44-0.1 +0.1 2.60-0.1 +0.1 4.00-0.1 Low on-state resistance +0.1 3.00-0.1 +0.1 0.40-0.1 1. Source Base 1. 2. Drain Collector 2. 3. Gate Emiitter 3. 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current (DC).

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Published: Sep 7, 2011 |