2SJ363 - P-Channel MOSFET

Hitachi Semiconductor

Datasheet Details

Part number	2SJ363
Manufacturer	Hitachi Semiconductor
File Size	37.85 KB
Description	P-Channel MOSFET
Datasheet	2SJ363_HitachiSemiconductor.pdf

Low on-resistance.
Low drive current.
4 V gate drive device can be driven from 5 V source Outline UPAK 2 1 4 D 1. Gate 2. Drain 3. Source 4. Drain S 3 G 2SJ363 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID I D(pulse).
I DR Pch.
Tch Tstg 2 1 Ratings.
30.

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Published: Mar 30, 2005 |