GSMDS2305 Datasheet (Globaltech)

GSMDS2305, P-Channel MOSFET

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

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GSMDS2305 Features

* -20V, -11A, RDS(ON)=16mΩ@VGS=-4.5V

* Improved dv/dt capability

* Fast switching

* Suit for -1.8V Gate Drive Applications

* Green Device Available

* SOP-8 package design Applications

* Notebook

* Load Switch

* Networking Packa