GSMDS0966 Datasheet (Globaltech)

GSMDS0966, N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Thes

GSMDS0966 Features

* 100V, 10A, RDS(ON)=18mΩ@VGS=10V

* Improved dv/dt capability

* Fast switching

* 100% EAS guaranteed

* Green Device Available

* SOP-8 package design Applications

* Networking

* Load Switch

* LED applications Packages & Pin Assi