GSMDD6966A Datasheet (Globaltech)

GSMDD6966A, N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Thes

GSMDD6966A Features

* 60V, 55A, RDS(ON)=8.2mΩ@VGS=10V

* Improved dv/dt capability

* Fast switching

* Green Device Available

* TO-252-2L package design Applications

* Networking

* Load Switch

* LED Applications Packages & Pin Assignments GSMDD6966ADF (TO-2