GSMDD6911 Datasheet (Globaltech)

GSMDD6911, P-Channel MOSFET

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Thes

GSMDD6911 Features

* -60V, -7A, RDS(ON)=180mΩ@VGS=-10V

* Improved dv/dt capability

* Fast switching

* 100% EAS guaranteed

* Green Device Available

* TO-252-2L package design Applications

* Motor Drive

* Power Tools

* LED Lighting Packages & Pin A