GSM2309KP Datasheet (Globaltech)

GSM2309KP, P-Channel MOSFET

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Thes

GSM2309KP Features

* -30V, -3.8A, RDS(ON)=75mΩ@VGS=-10V

* Fast switching

* Suit for -4.5V Gate Drive Applications

* G-S ESD Protection Diode Embedded

* Green Device Available

* SOT-23 package design Applications

* Notebook

* Load Switch

* Battery