GSM2308AP Datasheet (Globaltech)

GSM2308AP, N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Thes

GSM2308AP Features

* 60V, 6.1A, RDS(ON)=85mΩ@VGS=10V

* Improved dv/dt capability

* Fast switching

* 100% EAS guaranteed

* Green Device Available

* SOT-23 package design Applications

* Motor Drive

* Power Tools

* LED Lighting Packages & Pin Assign