MBRT20060 - (MBRT20045 - MBRT200100R) Silicon Power Schottky Diode

Product Overview

GeneSiC

Part number	MBRT20060
Manufacturer	GeneSiC
File Size	499.31 KB
Description	(MBRT20045 - MBRT200100R) Silicon Power Schottky Diode
Datasheet	MBRT20060 Datasheet
Note	This datasheet PDF includes multiple part numbers: MBRT20060, MBRT20045. Please refer to the document for exact specifications by model.
Additional preview pages of the MBRT20060 datasheet.

High Surge Capability.
Types up to 100 V VRRM.
Isolation Type Package Three Tower Package VRRM = 20 V - 100 V IF = 200 A Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Repetitive p p peak reverse voltage g RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature Symbol VRRM VRMS VDC IF IF,SM Tj Tstg TC ≤ 125.

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Other Datasheets by GeneSiC

MBRT20060R - (MBRT20045 - MBRT200100R) Silicon Power Schottky Diode
MBRT200100 - (MBRT20045 - MBRT200100R) Silicon Power Schottky Diode
MBRT200100R - (MBRT20045 - MBRT200100R) Silicon Power Schottky Diode
MBRT20045 - (MBRT20045 - MBRT200100R) Silicon Power Schottky Diode
MBRT20045R - (MBRT20045 - MBRT200100R) Silicon Power Schottky Diode
MBRT20080 - (MBRT20045 - MBRT200100R) Silicon Power Schottky Diode

Published: Nov 21, 2013 |