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MBRT20045 thru MBRT200100R
Silicon Power Schottky Diode
Features
• High Surge Capability • Types up to 100 V VRRM • Isolation Type Package Three Tower Package
VRRM = 20 V - 100 V IF = 200 A
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter Repetitive p p peak reverse voltage g RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature Symbol VRRM VRMS VDC IF IF,SM Tj Tstg TC ≤ 125 °C TC = 25 °C, tp = 8.
MBRT20045 Datasheet
