Datasheet4U.com

GC50MPS33H - Silicon Carbide Schottky Diode

GeneSiC

📥 Download Datasheet

GC50MPS33H Datasheet Preview — Preview of GC50MPS33H PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	GC50MPS33H
Manufacturer	GeneSiC
File Size	541.97 KB
Description	Silicon Carbide Schottky Diode
Datasheet	GC50MPS33H-GeneSiC.pdf

GC50MPS33H Product details

Features

Package.
Enhanced Surge and Avalanche Robustness.
Low VF for High Temperature Operation.
Superior Figure of Merit QC/IF.
Low Thermal Resistance.
Low Reverse Leakage Current.
Temperature Independent Fast Switching.
Positive Temperature Coefficient of VF G.
High dV/dt Ruggedness RIN Advantages.
High System Reliability E.
Optimal Price Performance.
Improved System Efficiency E.
Reduced Cool.

📁 GC50MPS33H Similar Datasheet

GC500 - Transistor (Tesla Elektronicke)
GC501 - Transistor (Tesla Elektronicke)
GC5018 - 8-CHANNEL WIDEBAND RECEIVER (Texas Instruments)
GC502 - Transistor (Tesla Elektronicke)
GC5040-220M - Power Inductors (GROUP-TEK)
GC507 - Transistor (Tesla Elektronicke)
GC508 - Transistor (Tesla Elektronicke)
GC509 - Transistor (Tesla Elektronicke)

Other Datasheets by GeneSiC

GC50MPS06-247 - Silicon Carbide Schottky Diode
GC50MPS12-247 - Silicon Carbide Schottky Diode

Published: Dec 20, 2024 |