Datasheet4U Logo Datasheet4U.com

GC50MPS12-247 Silicon Carbide Schottky Diode

GC50MPS12-247 Description

GC50MPS12-247 1200V 50A SiC Schottky MPS™ Diode Silicon Carbide Schottky Diode .

GC50MPS12-247 Features

* High Avalanche (UIS) Capability
* Enhanced Surge Current Capability
* Superior Figure of Merit QC/IF
* Low Thermal Resistance
* 175 °C Maximum Operating Temperature
* Temperature Independent Switching Behavior
* Positive Temperature Coefficie

GC50MPS12-247 Applications

* Boost Diode in Power Factor Correction (PFC)
* Switched Mode Power Supply (SMPS)
* Uninterruptible Power Supply (UPS)
* Motor Drives
* Freewheeling / Anti-parallel Diode in Inverters
* Solar In

📥 Download Datasheet

Preview of GC50MPS12-247 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
GC50MPS12-247
Manufacturer
GeneSiC
File Size
322.08 KB
Datasheet
GC50MPS12-247-GeneSiC.pdf
Description
Silicon Carbide Schottky Diode

📁 Related Datasheet

  • GC500 - Transistor (Tesla Elektronicke)
  • GC501 - Transistor (Tesla Elektronicke)
  • GC5018 - 8-CHANNEL WIDEBAND RECEIVER (Texas Instruments)
  • GC502 - Transistor (Tesla Elektronicke)
  • GC5040-220M - Power Inductors (GROUP-TEK)
  • GC507 - Transistor (Tesla Elektronicke)
  • GC508 - Transistor (Tesla Elektronicke)
  • GC509 - Transistor (Tesla Elektronicke)

📌 All Tags

Silicon Carbide Schottky Diode GeneSiC
GeneSiC GC50MPS12-247-like datasheet