High Temperature Silicon Carbide Power Schottky Diode
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GB05SLT12-252
1200 V SiC MPS™ Diode
Silicon Carbide Schottky Diode
Features
• High Avalanche (UIS) Capability • Enhanced Surge Current Capability • Superior Figure of Merit QC/IF • Low Thermal Resistance • 175 °C Maximum Operating Temperature • Temperature Independent Switching Behavior • Positive Temperature Coefficient of VF • Extremely Fast Switching Speeds
Package
Case
VRRM IF (Tc = 135°C) QC
2
1 TO-252-2L
= 1200 V = 13 A = 22 nC
Advantages
• Low Standby Power Losses • Improved Circuit Efficiency (Lower Overall Cost) • Low Switching Losses • Ease of Paralleling without Thermal Runaway • Smaller Heat Sink Requirements • Low Reverse Recovery Current • Low Device Capacitance • Low Reverse Leakage Current
Applications
• Boost Diode in Power Factor Correction (PFC) • Switched Mode Pow
GB05SLT12-252 Datasheet
