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GB05MPS33-263 - Silicon Carbide Schottky Diode

GB05MPS33-263 Description

GB05MPS33-263 3300V 5A SiC Schottky MPS™ Diode Silicon Carbide Schottky Diode .

GB05MPS33-263 Features

* Enhanced Surge and Avalanche Robustness
* Superior Figure of Merit QC/IF
* Low VF for High Temperature Operation
* Low Thermal Resistance
* Low Reverse Leakage Current
* Temperature Independent Fast Switching
* Positive Temperature Coefficien

GB05MPS33-263 Applications

* Medical Imaging
* High Voltage Sensing
* Oil Drilling
* Geothermal Instrumentation
* High Voltage Multipliers
* High Frequency Rectifiers
* High Voltage Switching
* Pulsed Power Absolute Maximum Ratings (At TC = 25°C Unless Otherwise

📥 Download Datasheet

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Datasheet Details

Part number
GB05MPS33-263
Manufacturer
GeneSiC
File Size
723.46 KB
Datasheet
GB05MPS33-263-GeneSiC.pdf
Description
Silicon Carbide Schottky Diode

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📌 All Tags

Silicon Carbide Schottky Diode GeneSiC
GeneSiC GB05MPS33-263-like datasheet