High Temperature Silicon Carbide Power Schottky Diode
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GB05MPS33-263 3300V 5A SiC Schottky MPS™ Diode
Silicon Carbide Schottky Diode
Features
• Enhanced Surge and Avalanche Robustness • Superior Figure of Merit QC/IF • Low VF for High Temperature Operation • Low Thermal Resistance • Low Reverse Leakage Current • Temperature Independent Fast Switching • Positive Temperature Coefficient of VF • High dV/dt Ruggedness
Advantages
• High System Reliability • Optimal Price Performance • Improved System Efficiency • Reduced Cooling Requirements • Increased System Power Density • Zero Reverse Recovery Current • Easy to Parallel without Thermal Runaway • Enables Extremely Fast Switching
TM
Package
VRRM
=
IF (TC = 135°C) =
QC
=
3300 V 8A 43 nC
Case
RoHS
TO-263-7
K
A
REACH
Applications
• Medical Imaging • High Voltage Sensing • Oil Drilling
GB05MPS33-263 Datasheet
