Datasheet Details
- Part number
- GAP3SHT33-CAU
- Manufacturer
- GeneSiC
- File Size
- 215.36 KB
- Datasheet
- GAP3SHT33-CAU-GeneSiC.pdf
- Description
- Silicon Carbide Power Schottky Diode
GAP3SHT33-CAU Description
Silicon Carbide Power Schottky Diode .
GAP3SHT33-CAU Features
* 3300 V Schottky rectifier
* 210 °C maximum operating temperature
* Positive temperature coefficient of VF
* Fast switching speeds
* Superior figure of merit QC/IF
Die Datasheet
GAP3SHT33-CAU
VRRM IF @ 25 oC
QC
= 3300 V = 0.3 A = 20 nC
Advantages
GAP3SHT33-CAU Applications
* Down Hole Oil Drilling, Geothermal Instrumentation
* High Voltage Multipliers
* Military Power Supplies
Maximum Ratings at Tj = 175 °C, unless otherwise specified
Parameter
Symbol
Conditions
Repetitive peak reverse voltage Continuous forward current RMS forward current
📁 Related Datasheet
📌 All Tags