GAP3SHT33-CAU Silicon Carbide Power Schottky Diode

GeneSiC

Description

Silicon Carbide Power Schottky Diode .

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Datasheet Specifications

Part number: GAP3SHT33-CAU
Manufacturer: GeneSiC
File Size: 215.36 KB
Datasheet: GAP3SHT33-CAU-GeneSiC.pdf
Description: Silicon Carbide Power Schottky Diode

Features

* 3300 V Schottky rectifier
* 210 °C maximum operating temperature
* Positive temperature coefficient of VF
* Fast switching speeds
* Superior figure of merit QC/IF Die Datasheet GAP3SHT33-CAU VRRM IF @ 25 oC QC = 3300 V = 0.3 A = 20 nC Advantages

Applications

* Down Hole Oil Drilling, Geothermal Instrumentation
* High Voltage Multipliers
* Military Power Supplies Maximum Ratings at Tj = 175 °C, unless otherwise specified Parameter Symbol Conditions Repetitive peak reverse voltage Continuous forward current RMS forward current

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GAP3SHT33-CAU Silicon Carbide Power Schottky Diode GeneSiC

GeneSiC GAP3SHT33-CAU-like datasheet