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GAP05SLT80-CAL Silicon Carbide Power Schottky Diode

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Description

Silicon Carbide Power Schottky Diode .

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Datasheet Specifications

Part number
GAP05SLT80-CAL
Manufacturer
GeneSiC
File Size
333.63 KB
Datasheet
GAP05SLT80-CAL-GeneSiC.pdf
Description
Silicon Carbide Power Schottky Diode

Features

* 8000 V Silicon Carbide Schottky rectifier
* 175 °C maximum operating temperature
* Positive temperature coefficient of VF
* Extremely fast switching speeds
* Superior figure of merit QC/IF Advantages
* Improved circuit efficiency (Lower overall cost)
* Low switching los

Applications

* Down Hole Oil Drilling, Geothermal Instrumentation
* High Voltage Multipliers
* Military Power Supplies Electrical Specifications Absolute Maximum Ratings Parameter Repetitive peak reverse voltage Continuous forward current RMS forward current Power dissipation Operating and storage t

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