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G2R120MT33J Silicon Carbide MOSFET

G2R120MT33J Description

G2R120MT33J 3300 V 120 mΩ SiC MOSFET Silicon Carbide MOSFET N-Channel Enhancement Mode .

G2R120MT33J Features

* Softer RDS(ON) v/s Temperature Dependency
* LoRing™ - Electromagnetically Optimized Design
* Smaller RG(INT) and Lower QG
* Low Device Capacitances (COSS, CRSS)
* Industry-Leading UIL & Short-Circuit Robustness
* Robust Body Diode with Low VF and Low

G2R120MT33J Applications

* Solar String Inverters
* EV- Fast Chargers
* Pulsed Power
* Switched Mode Power Supply
* Energy Storage
* Solid State Transformers
* Solid State Circuit Breakers RoHS REACH Absolute Maximum Ratings (At TC = 25°C Unless Otherwise Stated) Pa

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Datasheet Details

Part number
G2R120MT33J
Manufacturer
GeneSiC
File Size
1.21 MB
Datasheet
G2R120MT33J-GeneSiC.pdf
Description
Silicon Carbide MOSFET

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Silicon Carbide MOSFET GeneSiC
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