G2R1000MT17J Silicon Carbide MOSFET

GeneSiC

Description

G2R1000MT17J 1700 V 1000 mΩ SiC MOSFET Silicon Carbide MOSFET N-Channel Enhancement Mode .

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Datasheet Specifications

Part number: G2R1000MT17J
Manufacturer: GeneSiC
File Size: 1.21 MB
Datasheet: G2R1000MT17J-GeneSiC.pdf
Description: Silicon Carbide MOSFET

Features

* G2R™ Technology
* Softer RDS(ON) v/s Temperature Dependency
* LoRing™ - Electromagnetically Optimized Design
* Smaller RG(INT) and Lower QG
* Low Device Capacitances (COSS, CRSS)
* Industry-Leading UIL & Short-Circuit Robustness
* Robust Body

Applications

* Auxiliary Power Supply
* Solar Inverters (String and Central)
* Infrastructure Chargers
* Industrial Motors (AC Servos)
* General Purpose Inverters
* Pulsed Power
* Piezo Drivers
* Ion Beam Generators RoHS REACH Absolute Maximum Rat

G2R1000MT17J Distributors

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G2R G2R-1 G2R-1-E G2R-1-H G2R-1-S G2R-1-SD

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G2R1000MT17J Silicon Carbide MOSFET GeneSiC

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