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G2R1000MT17J 1700 V 1000 mΩ SiC MOSFET
Silicon Carbide MOSFET
N-Channel Enhancement Mode
Features
• G2R™ Technology • Softer RDS(ON) v/s Temperature Dependency • LoRing™ - Electromagnetically Optimized Design • Smaller RG(INT) and Lower QG • Low Device Capacitances (COSS, CRSS) • Industry-Leading UIL & Short-Circuit Robustness • Robust Body Diode with Low VF and Low QRR • Optimized Package with Separate Driver Source Pin
Advantages
• Compatible with Commercial Gate Drivers • Low Conduction Losses at all Temperatures • Reduced Ringing • Faster and More Efficient Switching • Lesser Switching Spikes and Lower Losses • Better Power Density and System Efficiency • Ease of Paralleling without Thermal Runaway • Superior Robustness and System Reliability
TM
VDS
=
RDS(ON)(Typ.
G2R1000MT17J Datasheet
