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1N8033-GA

The 1N8033-GA is High Temperature Silicon Carbide Power Schottky Diode designed by GeneSiC.

Product Overview

GeneSiC

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1N8033-GA High Temperature Silicon Carbide Power Schottky Diode by GeneSiC - Datasheet Preview — Datasheet preview – 1N8033-GA

Datasheet Details

Part number	1N8033-GA
Manufacturer	GeneSiC
File Size	706.12 KB
Description	High Temperature Silicon Carbide Power Schottky Diode
Datasheet	1N8033-GA-GeneSiC.pdf
Additional preview pages of the 1N8033-GA datasheet.

Product details

Features

650 V Schottky rectifier.
250 °C maximum operating temperature.
Zero reverse recovery charge.
Superior surge current capability.
Positive temperature coefficient of VF.
Temperature independent switching behavior.
Lowest figure of merit QC/IF.
Available screened to Mil-PRF-19500 Package.
RoHS Compliant 3 1 VRRM IF (Tc=25°C) QC = 650 V = 14 A = 20 nC PIN 1 PIN 3 SMD0.5 / TO.
276 (Hermetic Package) Advantages.
High temperature operat.

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Published: Jul 15, 2016 |