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1N8024-GA

The 1N8024-GA is High Temperature Silicon Carbide Power Schottky Diode designed by GeneSiC.

Product Overview

GeneSiC

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1N8024-GA High Temperature Silicon Carbide Power Schottky Diode by GeneSiC - Datasheet Preview — Datasheet preview – 1N8024-GA

Datasheet Details

Part number	1N8024-GA
Manufacturer	GeneSiC
File Size	765.75 KB
Description	High Temperature Silicon Carbide Power Schottky Diode
Datasheet	1N8024-GA-GeneSiC.pdf
Additional preview pages of the 1N8024-GA datasheet.

Product details

Features

1200 V Schottky rectifier.
250°C maximum operating temperature.
Electrically isolated base-plate.
Zero reverse recovery charge.
Superior surge current capability.
Positive temperature coefficient of VF.
Temperature independent switching behavior.
Lowest figure of merit QC/IF.
Available screened to Mil-PRF-19500 Package.
RoHS Compliant VRRM = 1200 V IF (Tc=25°C) = 2.5 A QC = 6 nC PIN 1 PIN 2 PIN 3 NC 123 TO.
257 (Isolated Base-pl.

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Published: Jul 15, 2016 |