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1N8024-GA - High Temperature Silicon Carbide Power Schottky Diode

Features

  • 1200 V Schottky rectifier.
  • 250°C maximum operating temperature.
  • Electrically isolated base-plate.
  • Zero reverse recovery charge.
  • Superior surge current capability.
  • Positive temperature coefficient of VF.
  • Temperature independent switching behavior.
  • Lowest figure of merit QC/IF.
  • Available screened to Mil-PRF-19500 Package.
  • RoHS Compliant VRRM = 1200 V IF (Tc=25°C) = 2.5 A QC = 6 nC PIN 1 PIN 2 PIN 3 NC 123 TO.
  • 257 (Isolated Base-pl.

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Datasheet Details

Part number 1N8024-GA
Manufacturer GeneSiC
File Size 765.75 KB
Description High Temperature Silicon Carbide Power Schottky Diode
Datasheet download datasheet 1N8024-GA Datasheet

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Full PDF Text Transcription

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1N8024-GA High Temperature Silicon Carbide Power Schottky Diode Features  1200 V Schottky rectifier  250°C maximum operating temperature  Electrically isolated base-plate  Zero reverse recovery charge  Superior surge current capability  Positive temperature coefficient of VF  Temperature independent switching behavior  Lowest figure of merit QC/IF  Available screened to Mil-PRF-19500 Package  RoHS Compliant VRRM = 1200 V IF (Tc=25°C) = 2.
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