TGBLN6601-5DL8 Datasheet - Galaxy Microelectronics

TGBLN6601-5DL8 - Dual N-Channel Enhancement Mode MOSFET

TGBLN6601-5DL8 Features

* Super low gate charge

* Green device available

* Excellent CdV / dt effect decline

* Advanced high cell density trench technology

* Halogen free

* Qualified to AEC-Q101 standards for high reliability Mechanical Data

* Case: PDFN5×6-8LC

* Molding Compound: UL Flamma

Datasheet Details

TGBLN6601-5DL8

Galaxy Microelectronics

523.88 KB

Dual n-channel enhancement mode mosfet.

TGBLN6601-5DL8 Distributor

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