GS66516B Datasheet (GaN Systems) - Bottom-side cooled 650V E-mode GaN transistor

GS66516B, Bottom-side cooled 650V E-mode GaN transistor

The GS66516B is an enhancement mode GaN on silicon power transistor.

The properties of GaN allow for high current, high voltage breakdown and high switching frequency.

GaN Systems innovates with industry leading advancements such as patented Island Technology® and GaNPX® packaging.

Island Technology

GS66516B Features

* 650 V enhancement mode power transistor

* Bottom-side cooled configuration

* RDS(on) = 25 mΩ

* IDS(max) = 60 A

* Ultra-low FOM die

* Low inductance GaNPX® package

* Simple drive requirements (0 V to 6 V)

* Transient tolerant gate driv