GS66508B Datasheet (GaN Systems) - Bottom-side cooled 650V E-mode GaN transistor

GS66508B, Bottom-side cooled 650V E-mode GaN transistor

The GS66508B is an enhancement mode GaN-onsilicon power transistor.

The properties of GaN allow for high current, high voltage breakdown and high switching frequency.

GaN Systems innovates with industry leading advancements such as patented Island Technology® and GaNPX® packaging.

Island Technology®

GS66508B Features

* 650 V enhancement mode power transistor

* Bottom-side cooled configuration

* RDS(on) = 50 mΩ

* IDS(max) = 30 A

* Ultra-low FOM die

* Low inductance GaNPX® package

* Simple gate drive requirements (0 V to 6 V)

* Transient tolerant gate