GS8160E18DGT Datasheet (GSI Technology)

GS8160E18DGT, 18Mb Sync Burst SRAMs

Applications The GS8160E18/32/36DGT is an 18,874,368-bit high performance synchronous SRAM with a 2-bit burst address counter.

Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs,

GS8160E18DGT Features

* FT pin for user-configurable flow through or pipeline operation

* Dual Cycle Deselect (DCD) operation

* 2.5 V or 3.3 V +10%/

* 10% core power supply

* 2.5 V or 3.3 V I/O supply

* LBO pin for Linear or Interleaved Burst mode

* Internal input res