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GS8160E36DGT - 18Mb Sync Burst SRAMs

Download the GS8160E36DGT datasheet PDF. This datasheet also covers the GS8160E18DGT variant, as both devices belong to the same 18mb sync burst srams family and are provided as variant models within a single manufacturer datasheet.

Description

Applications The GS8160E18/32/36DGT is an 18,874,368-bit high performance synchronous SRAM with a 2-bit burst address counter.

Features

  • FT pin for user-configurable flow through or pipeline operation.
  • Dual Cycle Deselect (DCD) operation.
  • 2.5 V or 3.3 V +10%/.
  • 10% core power supply.
  • 2.5 V or 3.3 V I/O supply.
  • LBO pin for Linear or Interleaved Burst mode.
  • Internal input resistors on mode pins allow floating mode pins.
  • Default to Interleaved Pipeline mode.
  • Byte Write (BW) and/or Global Write (GW) operation.
  • Internal self-timed write cycle.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (GS8160E18DGT-GSITechnology.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number GS8160E36DGT
Manufacturer GSI Technology
File Size 237.67 KB
Description 18Mb Sync Burst SRAMs
Datasheet download datasheet GS8160E36DGT Datasheet

📁 Similar Datasheet

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GS816132B (GS816118B - GS816136B) Sync Burst SRAMs GSI
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Other Datasheets by GSI Technology

Part Number Description
GS8160E32DGT 18Mb Sync Burst SRAMs
GS8160E18DGT 18Mb Sync Burst SRAMs
GS816018BT-150 18Mb Sync Burst SRAMs
GS816018BT-200 18Mb Sync Burst SRAMs
GS816018BT-250 18Mb Sync Burst SRAMs

Full PDF Text Transcription

Click to expand full text
GS8160E18/32/36DGT-400/375/333/250/200/150 100-Pin TQFP Commercial Temp Industrial Temp 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs 400 MHz–150 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O Features • FT pin for user-configurable flow through or pipeline operation • Dual Cycle Deselect (DCD) operation • 2.5 V or 3.3 V +10%/–10% core power supply • 2.5 V or 3.
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