G3S06520B 650V/20A Silicon Carbide Power Schottky Barrier Diode

Description

Datasheet V2020.A.1 G3S06520B 650V/20A Silicon Carbide Power Schottky Barrier Diode .

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Datasheet Specifications

Part number: G3S06520B
Manufacturer: GPT
File Size: 634.36 KB
Datasheet: G3S06520B-GPT.pdf
Description: 650V/20A Silicon Carbide Power Schottky Barrier Diode

Features

* Zero reverse recovery current
* Zero forward recovery voltage
* Temperature independent switching behavior
* High temperature operation
* High frequency operation Benefits
* Unipolar rectifier
* Substantially reduced switching losses

Applications

* SMPS, e. g. , CCM PFC;
* Motor drives, Solar application, UPS, Wind turbine, Rail traction, EV/HEV Key Characteristics VRRM 650 V IF, Tc≤154℃ 10
* A QC 36
* nC Part No. G3S06520B
* Per leg;
* Per device Package Type TO-247AB Marking G3S06520B G3S06520B ©

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