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G3S06505R Datasheet 650V/5A Silicon Carbide Power Schottky Barrier Diode

Manufacturer: GPT

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Datasheet Details

Part number G3S06505R
Manufacturer GPT
File Size 612.64 KB
Description 650V/5A Silicon Carbide Power Schottky Barrier Diode
Datasheet download datasheet G3S06505R Datasheet

Overview

Datasheet V2020.A.1 G3S06505R 650V/5A Silicon Carbide Power Schottky Barrier.

Key Features

  • Zero reverse recovery current.
  • Zero forward recovery voltage.
  • Temperature independent switching behavior.
  • High temperature operation.
  • High frequency operation Key Characteristics VRRM 650 V IF, Tc≤160℃ 5A QC 23 nC Benefits.
  • Unipolar rectifier.
  • Substantially reduced switching losses.
  • No thermal run-away with parallel devices.
  • Reduced heat sink requirements.

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