• Part: G3S06505R
  • Description: 650V/5A Silicon Carbide Power Schottky Barrier Diode
  • Manufacturer: GPT
  • Size: 612.64 KB
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G3S06505R Datasheet Text

Datasheet V2020.A.1 G3S06505R 650V/5A Silicon Carbide Power Schottky Barrier Diode Features - Zero reverse recovery current - Zero forward recovery voltage - Temperature independent switching behavior - High temperature operation - High frequency operation Key Characteristics VRRM 650 V IF, Tc≤160℃ 5A QC 23 nC Benefits - Unipolar rectifier - Substantially reduced switching losses - No thermal run-away with parallel devices - Reduced heat sink requirements Applications - SMPS, e.g., CCM PFC; - Motor drives, Solar application, UPS, Wind turbine, Rail traction, EV/HEV Part No. G3S06505R Package Type TO-252 Marking G3S06505R G3S06505R ©2020 Global Power Technology pany Ltd...