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GT090N06 - N-Channel Enhancement Mode Power MOSFET

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GT090N06 N-Channel Enhancement Mode Power MOSFET by GOFORD - Datasheet Preview — Datasheet preview – GT090N06

Datasheet Details

Part number	GT090N06
Manufacturer	GOFORD
File Size	690.72 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	GT090N06 Datasheet
Note	This datasheet PDF includes multiple part numbers: GT090N06, GT090N06D52. Please refer to the document for exact specifications by model.
Additional preview pages of the GT090N06 datasheet.

Product details

Description

The GT090N06D52 uses advanced trench technology to provide excellent RDS(ON) , low gate charge.

Features

VDS.
ID (at VGS = 10V).
RDS(ON) (at VGS = 10V).
RDS(ON) (at VGS = 4.5V).
100% Avalanche Tested.
RoHS Compliant 60V 40A < 14mΩ < 18mΩ.

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Published: Nov 14, 2024 |