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G80N06 - MOSFET

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Datasheet Details

Part number	G80N06
Manufacturer	GOFORD
File Size	1.46 MB
Description	MOSFET
Datasheet	G80N06-GOFORD.pdf

G80N06 Product details

Description

The G80N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Features

VDSS RDS(ON) ID @ 4.5V(typ) 60V 9.5 mΩ 80 A.
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Good stability and uniformity with high EAS.
Excellent package for good heat dissipation.
Special process technology for high ESD capability.

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Published: Nov 14, 2024 |