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G800N06H N-Channel Enhancement Mode Power MOSFET

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Description

G800N06H N-Channel Enhancement Mode Power MOSFET .
The G800N06H uses advanced trench technology to provide excellent RDS(ON) , low gate charge.

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Datasheet Specifications

Part number: G800N06H
Manufacturer: GOFORD
File Size: 869.92 KB
Datasheet: G800N06H-GOFORD.pdf
Description: N-Channel Enhancement Mode Power MOSFET

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G800N06H N-Channel Enhancement Mode Power MOSFET GOFORD

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