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G50N03 - N-Channel Enhancement Mode Power MOSFET

Download the G50N03 datasheet PDF. This datasheet also covers the G50N03D5 variant, as both devices belong to the same n-channel enhancement mode power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The G50N03D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS.
  • ID (at VGS = 10V).
  • RDS(ON) (at VGS = 10V).
  • RDS(ON) (at VGS = 4.5V).
  • 100% Avalanche Tested.
  • RoHS Compliant 30V 50A < 4.5mQ < 8mQ.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (G50N03D5-GOFORD.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number G50N03
Manufacturer GOFORD
File Size 594.76 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet G50N03 Datasheet

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Other Datasheets by GOFORD

Part Number Description
G50N03A MOSFET
G50N03D5 N-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
G50N03D5 N-Channel Enhancement Mode Power MOSFET Description The G50N03D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features ⚫ VDS ⚫ ID (at VGS = 10V) ⚫ RDS(ON) (at VGS = 10V) ⚫ RDS(ON) (at VGS = 4.5V) ⚫ 100% Avalanche Tested ⚫ RoHS Compliant 30V 50A < 4.