G3K8N15KE - N-Channel Enhancement Mode Power MOSFET

Datasheet Details

The G3K8N15KE uses advanced trench technology to provide excellent RDS(ON) , low gate charge.It can be used in a wide variety of applications.General

l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) 150V 6A < 370mΩ < 390mΩ l 100% Avalanche Tested l RoHS Compliant l ESD (HBM)>2.5KV Schematic diagram Application l Power switch l DC/DC converters Ordering Information Device G3K8N15KE Package TO-252 Marking G3K8N15 TO-252 Packaging 2500pcs/Reel Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-S.

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