2301H N-Channel MOSFET

Description

GOFORD .
The 2301H uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.

Datasheet Specifications

Features

* VDSS RDS(ON) RDS(ON) ID @ -4.5V(Typ) @ -10V(Typ) -30V 105mΩ 65mΩ -2 A
* High Power and current handing capability
* RoHS Compliant

2301H Distributors

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GOFORD 2301H-like datasheet