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TIP112 - NPN Epitaxial Silicon Darlington Transistor

TIP112 Description

Production specification NPN Epitaxial Silicon Darlington Transisor TIP112 .

TIP112 Features

* Monolithic Construction With Built in Base -Emitter Shunt Resistors.
* Complementary to TIP117. Pb Lead-free
* High DC Current Gain:hFE=1000@VCE=4V,IC=1A.
* Low Collector-Emitter Saturation Voltage.
* Industrial Use. TO-220AB MAXIMUM RATING operating temperature range app

📥 Download Datasheet

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Datasheet Details

Part number
TIP112
Manufacturer
GME
File Size
205.21 KB
Datasheet
TIP112-GME.pdf
Description
NPN Epitaxial Silicon Darlington Transistor

📁 Related Datasheet

  • TIP110 - NPN Transistor (INCHANGE)
  • TIP110A - PNP Epitaxial Silicon Transistor (First Components International)
  • TIP111 - NPN Transistor (INCHANGE)
  • TIP115 - PNP Transistor (INCHANGE)
  • TIP116 - PNP Epitaxial Silicon Darlington Transistors (MCC)
  • TIP117 - EPITAXIAL PLANAR PNP TRANSISTOR (KEC)
  • TIP117F - EPITAXIAL PLANAR PNP TRANSISTOR (KEC)
  • TIP119 - Six Channel 16 bit Quadrature Decoder Counter (TEWS TECHNOLOGIES)

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NPN Epitaxial Silicon Darlington Transistor GME
GME TIP112-like datasheet