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MJD32C - Epitaxial Planar PNP Transistor

Features

  • z Low formed for surface mount Pb.

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Datasheet Details

Part number MJD32C
Manufacturer Galaxy Microelectronics
File Size 124.29 KB
Description Epitaxial Planar PNP Transistor
Datasheet download datasheet MJD32C Datasheet
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Full PDF Text Transcription

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Epitaxial Planar PNP Transistor FEATURES z Low formed for surface mount Pb application. Lead-free z Electrically similar to popular and TIP32C. z Straight Lead. APPLICATIONS z General purpose amplifier. z Low speed switching applications. Production specification MJD32C TO-251 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VCBO VCEO Collector-Base Voltage Collector-Emitter Voltage -100 -100 V V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -3 A ICP Collector Current -Peak -5 A IB Base Current -1 A PC Collector Power Dissipation 1.5 W Tj ,Tstg Junction and Storage temperature range -65 to +150 ℃ V/(W)034 Rev.A www.gmicroelec.
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