Datasheet Details
- Part number
- BL1N60F
- Manufacturer
- GME
- File Size
- 213.10 KB
- Datasheet
- BL1N60F-GME.pdf
- Description
- N-Channel Power MOSFET
BL1N60F Description
Production specification N-Channel Enhancement Mode Field Effect Transistor .
BL1N60F Features
* RDS(ON) =9.3Ω@VGS = 10V. Pb
* Ultra Low gate charge (typical 5.0nC)
Lead-free
* Low reverse transfer capacitance (CRSS = typical 3.0 pF)
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
BL1N60F
ITO-220AB
MAXIMUM
📁 Related Datasheet
📌 All Tags