Datasheet Details
- Part number
- BL1N60
- Manufacturer
- GME
- File Size
- 212.80 KB
- Datasheet
- BL1N60-GME.pdf
- Description
- N-Channel Power Mosfet
BL1N60 Description
Production specification N-Channel Enhancement Mode Field Effect Transistor .
BL1N60 Features
* RDS(ON) =9.3Ω@VGS = 10V. Pb
* Ultra Low gate charge (typical 5.0nC)
Lead-free
* Low reverse transfer capacitance (CRSS = typical 3.0 pF)
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
BL1N60
TO-220AB
MAXIMUM R
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