80N03 MOSFET

80N03 Description

GOFORD .
The 80N03 uses advanced trench technology And design to provide excellent RDS (ON ) with Low gate charge .

80N03 Features

* VDS = 30 V, ID = 80 A RDS(ON) < 6 mΩ @ VGS = 10 V
* High density cell design for ultra low Rdson
* Fully characterized Avalanche voltage and current
* Good stabilty and unifomity with high EAS
* Excellent package for good heat dissipation
* Special process technology for hi

80N03 Applications

* . 80N03 VDS RDS(ON) ID 30V

📥 Download Datasheet

80N03 Datasheet Preview — Preview of 80N03 PDF

Datasheet Details

Part number: 80N03
Manufacturer: GFD
File Size: 2.17 MB
Datasheet: 80N03-GFD.pdf
Description: MOSFET

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MOSFET GFD

GFD 80N03-like datasheet