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80N03 MOSFET

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Description

GOFORD .
The 80N03 uses advanced trench technology And design to provide excellent RDS (ON ) with Low gate charge .

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Datasheet Specifications

Part number
80N03
Manufacturer
GFD
File Size
2.17 MB
Datasheet
80N03-GFD.pdf
Description
MOSFET

Features

* VDS = 30 V, ID = 80 A RDS(ON) < 6 mΩ @ VGS = 10 V
* High density cell design for ultra low Rdson
* Fully characterized Avalanche voltage and current
* Good stabilty and unifomity with high EAS
* Excellent package for good heat dissipation
* Special process technology for hi

Applications

* . 80N03 VDS RDS(ON) ID 30V

80N03 Distributors

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